Graphene Nanoribbon Double Junction Device Modeling

S.N. Hedayat, M.T. Ahmadi, H. Sedghi, H. Goudarzi

Low dimensional transmission coefficient as a main transport factor need to be explored in this work the transmission coefficient for multi potential barriers is investigated. All theoretical expressions such as height, width of potential barriers, distance between them and carrier property are included to have exact value of transmission coefficient. Additionally, as it is required in many electronic devices to specify conductance of component the exact determination of transmission coefficient especially for graphene based devices is analyzed. Non-isotropic character of transmission coefficient causes to have some extension on Land Auer formalism to derive more accurate expression on graphene based transistors. Finally based on the proposed model the temperature effect on device characteristics is discussed. 

In this paper transmission coefficient of the schottcky structure in the graphene based transistor is modeled based on the width of semiconducting channel and then its quantum properties due to the dependence on structural parameter are analyzed.